symbol v ds v gs i dm t j , t stg symbol ty p max 47.5 62.5 74 110 r jl 37 50 junction and storage temperature range a p d c 2 1.4 -55 to 150 t a =70c i d -5 -4.2 -20 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage -30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO6419 p-channel enhancement mode field effect transistor features v ds (v) = -30v i d = -5 a (v gs = -10v) r ds(on) < 52m ? (v gs = -10v) r ds(on) < 87m ? (v gs = -4.5v) r ds(on) < 110m ? (v gs = -3.5v) general description the AO6419 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product AO6419 is pb-free (meets rohs & sony 259 specifications). AO6419l is a green product ordering option. AO6419 and a o6419l are electrically identical. tsop6 top view g d s g d d s d d 1 2 3 6 5 4 alpha & omega semiconductor, ltd.
AO6419 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.8 -3 v i d(on) -20 a 39 52 t j =125c 54 70 67 87 m ? ? ? q g (10v) 14.7 18 nc q g (4.5v) 7.6 9.5 nc q gs 2nc q gd 3.8 nc t d(on) 8.3 ns t r 5ns t d(off) 29 ns t f 14 ns t rr 23.5 30 ns q rr 13.4 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-10v, i d =5.0a reverse transfer capacitance i f =-5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a v gs =-3.5v, i d =-1a switching parameters total gate charge (4.5v) gate source charge gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-5a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3 ? , r gen =3 ? turn-off fall time turn-on delaytime dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 0: nov 2005 alpha & omega semiconductor, ltd.
AO6419 typical electrical and thermal characteristics functions and reliability without notice. 0 5 10 15 20 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-3v -3.5v -4v -10v -4.5v -5v -6v 0 2 4 6 8 10 01234 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 20 40 60 80 100 13579 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-4.5v v gs =-10v v gs =-3.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v v gs =-3.5v 20 40 60 80 100 120 140 160 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-5a 25c 125c i d =-5a -2.5v alpha & omega semiconductor, ltd.
AO6419 typical electrical and thermal characteristics functions and reliability without notice. 0 2 4 6 8 10 0246810121416 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
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